Research Assistant at University of Cambridge

University of Cambridge, UK is inviting applicants to apply for a postdoc position in semiconductors. The funding allows successful candidate to work for 2 years. This position is closed on November 19, 2018.

Fixed-term: The funds for this post are available for 2 years in the first instance.

Applications are invited for a postdoctoral research position in the University of Cambridge to focus on the characterisation of gallium nitride and related materials. The postdoctoral researcher will engage with a number of projects led by Professor Rachel Oliver and Professor David Wallis in the Cambridge Centre for Gallium Nitride. In particular, the person appointed will work on the characterisation and modelling of nitride devices grown on silicon for heterogeneous integration with other materials and devices via a transfer printing. However, there will also be opportunities for engagement with other topics, particularly the growth of cubic GaN on SiC on Si, and the application of porous nitrides in the heterogeneous integration context.

The Cambridge Centre for Gallium Nitride (in the Department of Materials Science and Metallurgy at the University of Cambridge) is one of a small number of places in the world to have, in close proximity and on the same site, state-of-the-art gallium nitride growth equipment and extensive advanced electron microscopy characterisation facilities along with a broad range of other characterisation facilities. Our work focuses on understanding the fundamental links between crystal growth, materials structure and optoelectronic properties in the nitride semiconductors, and on exploiting that understanding in the development of devices.

The post-doctoral researcher will contribute to this strategy by performing advanced electron microscopy characterisation of a range of nitride samples and by developing models for strain evolution within these materials. They will also contribute to materials characterisation using a range of other techniques which could include X-ray diffraction, atomic force microscopy, photoluminescence and Hall effect measurements. The role includes training students in the application of these characterisation techniques and collaborating extensively with both crystal growers and device physicists. Contributions to projects involving extensive interaction both with other universities and with industry, and will develop effective working relationships with a range of collaborators are expected.

The successful candidate will have extensive expertise in advanced electron microscopy of semiconductors, and experience of a range of other relevant characterisation techniques. Experience of either or both of nitride materials grown on silicon and/or the modelling of strain states in multi-layered or nanostructured materials are highly desirable.

Additionally, the successful candidate will have or about to be awarded a PhD in a relevant field (e.g. materials science, physics, engineering) and will have a track record of publication in peer-reviewed international journals, together with good communication skills and experience of both team-based and independent working.

Applications should include a covering letter, curriculum vitae with a list of publications.

Further information can be obtained from Professor RA Oliver:


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